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    • China SiC Cover Plate Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Cover Plate for many years and is one of the professional SiC Cover Plate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Aluminum Nitride Ceramic Chuck

      Aluminum Nitride Ceramic Chuck

      Semicorex Aluminum Nitride Ceramic Chuck represents a cutting-edge solution for semiconductor wafer processing, specifically designed to securely hold wafers in place during various stages of manufacturing. Functioning as an electrostatic chuck (ESC), this innovative device leverages the exceptional properties of aluminum nitride ceramic to ensure precise and reliable wafer retention. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Aluminum Nitride Wafer Holder

      Aluminum Nitride Wafer Holder

      You can rest assured to buy Aluminum Nitride Wafer Holder from our factory. Semicorex Aluminum Nitride (AlN) Wafer Holder stands as an indispensable component within the realm of semiconductor processing, serving as a pivotal platform for securely holding delicate wafers throughout various stages of fabrication. Crafted from high-quality aluminum nitride material, renowned for its exceptional thermal conductivity, mechanical strength, and electrical insulation properties, this wafer holder ensures optimal conditions for precise and efficient semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • RTP SiC Coating Carrier

      RTP SiC Coating Carrier

      Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
    • CVD TaC Coated Ring

      CVD TaC Coated Ring

      Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
    • TaC Coating Graphite Cover

      TaC Coating Graphite Cover

      Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Graphite Soft Felt

      Graphite Soft Felt

      Semicorex Graphite Soft Felt is a high-performance insulation material designed to maintain optimal temperature conditions in semiconductor crystal growth processes. Semicorex offers advanced solutions with superior thermal management, ensuring high-quality materials and reliable performance in critical semiconductor manufacturing applications.*
    • Related Blog
    • Reviews

    • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

      Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

    • Introducing Silicon Material

      Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

    • TaC Coating Crucible for AlN Crystal Growth

      The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

    • TSMC: 2nm process risk trial production next year

      In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Crystal Orientation and Defects in Silicon Wafers

      The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

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