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China SiC Coating Semiconductor Manufacturers, Suppliers, Factory

Semicorex has been producing SiC Coating Semiconductor for many years and is one of the professional SiC Coating Semiconductor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • Silicon Carbide Wafer Chuck

    Silicon Carbide Wafer Chuck

    The Semicorex Silicon Carbide Wafer Chuck is an essential component in the semiconductor epitaxial process. It serves as a vacuum chuck to securely hold wafers during critical manufacturing stages. We are committed to delivering top-quality products at competitive prices, positioning ourselves to be your long-term partner in China.*
  • Solar Graphite Boat

    Solar Graphite Boat

    Semicorex Solar Graphite Boat, a precision-engineered wafer holder designed to meet the exacting demands of high-temperature semiconductor processing. Crafted from premium-grade graphite, this innovative boat offers unparalleled thermal stability and durability, ensuring optimal performance in even the most demanding furnace environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Epitaxy

    SiC Epitaxy

    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Heater

    Graphite Heater

    Semicorex Graphite Heater is an advanced heating component made from high-purity isostatic graphite, designed for use in monocrystalline silicon (Si) crystal growth applications. As an essential part of semiconductor manufacturing, this product provides precise, uniform heating necessary for high-quality Si crystal production. Through its specialized design and high-performance material, it ensures optimal conditions for crystal growth, significantly enhancing the efficiency and consistency of the process.*
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is a MOCVD system?

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

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