English
Home > Products
  • MOCVD Reactor Design

    • China MOCVD Reactor Design Manufacturers, Suppliers, Factory

    Semicorex has been producing MOCVD Reactor Design for many years and is one of the professional MOCVD Reactor Design manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • TaC Coated Chuck

      TaC Coated Chuck

      Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Silicon Nitride Guide Roller

      Silicon Nitride Guide Roller

      Silicon Nitride Guide Roller by Semicorex represents a pinnacle in advanced ceramic engineering. This product offers a remarkable blend of mechanical, thermal, and electrical properties.**
    • Tantalum Carbide Coated Porous Graphite

      Tantalum Carbide Coated Porous Graphite

      Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • SiC Disc Susceptor

      SiC Disc Susceptor

      Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
    • Zirconia ZrO2 Robot Arm

      Zirconia ZrO2 Robot Arm

      Semicorex Zirconia ZrO2 Robot Arm, a vital component in semiconductor processing for seamless wafer transfer and handling. Crafted to endure the rigorous demands of high-temperature, corrosive, and abrasive environments, this ceramic arm boasts unparalleled durability and reliability. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Quartz Cleaning Tank

      Quartz Cleaning Tank

      Semicorex Quartz Cleaning Tank stands as a pinnacle in semiconductor processing, meticulously engineered to ensure the pristine purity essential for the delicate task of wafer cleaning. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • Substantial growth of the SiC coated graphite susceptor market

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • Application Scenarios for Epitaxial Layers

      We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

    • Surface Polishing of Silicon Wafers

      Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

    • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

      The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept