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Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?