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This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

Silicon carbide (SiC) is currently facing challenges in the "price war," while gallium nitride (GaN) is emerging as a key player in the next technological battlefield.

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

In chip manufacturing, photolithography and etching are two closely linked steps. Photolithography precedes etching, where the circuit pattern is developed on the wafer using photoresist. Etching then removes the film layers not covered by the photoresist, completing the transfer of the pattern from the mask to the wafer and preparing for subsequent steps like ion implantation.