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graphite company, We have customers from more than 20 countries and our reputation has been recognized by our esteemed customers. Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.

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    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • SiC Lid

    SiC Lid

    Semicorex SiC Lid is a high-purity silicon carbide component engineered for extreme semiconductor processing environments. Choosing Semicorex means ensuring unmatched material quality, precision engineering, and custom solutions trusted by leading semiconductor manufacturers worldwide.*
  • SiC Inlet Rings

    SiC Inlet Rings

    Semicorex SiC Inlet Rings are high-performance silicon carbide components engineered for semiconductor processing equipment, offering exceptional thermal stability, chemical resistance, and precision machining. Choosing Semicorex means gaining access to reliable, customized, and contamination-free solutions trusted by leading semiconductor manufacturers.*
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  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • Introducing core technology of graphite boat

    Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

  • What are First-generation, Second-generation, Third-generation, and Fourth-generation semiconductor materials?

    Semiconductor materials are the materials with electrical conductivity between conductors and insulators at room temperature, which are widely used in fields like integrated circuits, communications, energy and optoelectronics. With development of technology, semiconductor materials have evolved from the first generation to the fourth generation.

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