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    • China carbon graphite insulation Manufacturers, Suppliers, Factory

    Semicorex has been producing carbon graphite insulation for many years and is one of the professional carbon graphite insulation manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Aluminum Nitride Electrostatic Chucks

      Aluminum Nitride Electrostatic Chucks

      Semicorex Aluminum Nitride Electrostatic Chucks offer a compelling combination of properties that make them ideally suited for the demanding requirements of semiconductor wafer processing. Their ability to provide secure and uniform wafer clamping, excellent thermal management, and resistance to harsh processing environments translates into improved device performance, higher yields, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Electrostatic Chucks that fuse quality with cost-efficiency.**
    • High-purity Carbon Powder

      High-purity Carbon Powder

      Semicorex High-purity Carbon Powder serves as a crucial precursor in the synthesis of high-purity silicon carbide (SiC) powder and other solid-state carbide materials. It ensures the purity and quality required for advanced applications in the semiconductor, electronics, and ceramics industries. We at Semicorex are dedicated to manufacturing and supplying high-performance High-purity Carbon Powder that fuse quality with cost-efficiency.**
    • Graphite Foil Roll

      Graphite Foil Roll

      Semicorex Graphite Foil Roll is an advanced material made from expanded natural graphite, designed to meet the precise demands of high-temperature applications. With resilience, chemical inertness, and superior thermal properties, this product stands out as an essential component in various industries including semiconductor, solar, and ceramics.**
    • High-Purity SiC Boat

      High-Purity SiC Boat

      Constructed from silicon carbide of exceptional purity, The Semicorex High-Purity SiC Boat demonstrates superior thermal stability, mechanical robustness, and resistance to chemicals. This material selection is critical to diminish potential contamination, safeguard the wafers from harm, and endure the rigorous conditions encountered in semiconductor fabrication. Semicorex’s commitment to manufacturing and supplying market-leading quality products, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • MOCVD Vacuum Chamber Lid

      MOCVD Vacuum Chamber Lid

      MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Rigid Felt Crucible

      Rigid Felt Crucible

      Semicorex Rigid Felt Crucible stands out as a premium choice for high-temperature applications in the semiconductor industry. Its combination of high compressive strength and excellent thermal insulation makes it a reliable and efficient component in crystal growth processes. By choosing Semicorex Rigid Felt Crucible, you invest in a product that not only enhances your manufacturing capabilities but also supports your commitment to quality and performance. *
    • Related Blog
    • Reviews

    • Thin film growth process

      Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

    • TaC Coating

      According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

    • What is epitaxial wafer process?

      Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

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