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Silicon Carbide Graphite Substrate MOCVD Susceptor

Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.

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Product Description

Our Silicon Carbide Graphite Substrate MOCVD Susceptor is highly pure, made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring the uniformity and consistency of the product. It is also highly corrosion-resistant, with a dense surface and fine particles, making it resistant to acid, alkali, salt, and organic reagents. Its high-temperature oxidation resistance ensures stability at high temperatures up to 1600°C.
Contact us today to learn more about our Silicon Carbide Graphite Substrate MOCVD Susceptor.

Parameters of Silicon Carbide Graphite Substrate MOCVD Susceptor

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion