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Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.