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Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.