English
Home > Products > white fused alumina oxide

China white fused alumina oxide Manufacturers, Suppliers, Factory

We've been also concentrating on bettering the things management and QC method in order that we could continue to keep terrific benefit inside the fiercely-competitive company for white fused alumina oxide,high purity alumina,nano alumina,aluminium oxide ceramics,alumina ceramics, Welcome all nice buyers communicate specifics of products and ideas with us!!
white fused alumina oxide, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective solutions and meticulous after-sales service. We firmly believe that: we're outstanding as we have been specialized.

Related Products

Hot Products

  • TaC Ring

    TaC Ring

    Semicorex TaC ring is a high-performance component designed for SiC single crystal growth, ensuring optimal gas flow distribution and temperature control. Choose Semicorex for our expertise in advanced materials and precision engineering, providing durable and reliable solutions that enhance the efficiency and quality of your semiconductor processes.*
  • Glass-like Carbon Coating

    Glass-like Carbon Coating

    Semicorex Glass-like carbon coating is an advanced protective layer engineered for high-performance applications requiring exceptional hardness, thermal stability, and low particulate emission. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Wafer Inspection Chucks

    SiC Wafer Inspection Chucks

    Semicorex SiC Wafer Inspection Chucks are critical enablers for advanced semiconductor manufacturing, addressing the increasing demands for precision, cleanliness, and throughput. Their superior material properties translate to tangible benefits throughout the wafer fabrication process, ultimately contributing to higher yields, improved device performance, and lower overall manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Inspection Chucks that fuse quality with cost-efficiency.**
  • TaC Coating Guide Rings

    TaC Coating Guide Rings

    TaC Coating Guide Rings are graphite ring with a tantalum carbide coating, designed for use in silicon carbide crystal growth furnaces to enhance crystal quality. Choose Semicorex for its advanced coating technology, ensuring superior durability, thermal stability, and optimized crystal growth performance.*
  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • Related Blog
  • Reviews

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

  • What is the advantage of silicon carbide?

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • SiGe in Chip Manufacturing: A Professional News Report

    To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept