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Ceramic Wafer Processing, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which might be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we will continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

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  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • SiC Heating Element Heater Filament SiC Rods

    SiC Heating Element Heater Filament SiC Rods

    Semicorex SiC Heating Element Heater Filament SiC Rods, is a specialized tool used in the handling and processing of semiconductor wafers. This crucial piece of equipment plays a pivotal role in creating the optimal thermal environment necessary for the production of high-quality semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Guide Ring

    Tantalum Carbide Guide Ring

    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • Silicon Carbide Composite Membrane

    Silicon Carbide Composite Membrane

    Semicorex Silicon Carbide Composite Membrane is an advanced filtration solution, combining the superior properties of silicon carbide, alumina, and calcium oxide to deliver high-performance filtration across a wide range of industries. Semicorex is the trusted choice for this cutting-edge technology, offering unmatched quality, reliability, and tailored solutions that ensure optimal efficiency and long-term performance for your filtration needs.*
  • SIC ceramic cantilever paddles

    SIC ceramic cantilever paddles

    Semicorex SiC ceramic cantilever paddles are high-performance components designed for thermal processing furnaces used in fields such as semiconductor and photovoltaic cell manufacturing. Semicorex carefully selects high-purity silicon carbide materials and employs industry-leading precision manufacturing processes, looking forward to your purchase with our high-quality products and services.
  • SiC Wafer Cassette

    SiC Wafer Cassette

    Semicorex SiC Wafer Cassette is a high-purity, precision-engineered wafer handling component designed to meet the stringent demands of advanced semiconductor manufacturing. Semicorex delivers a solution built for stability, cleanliness, and precision — ensuring the safe, reliable transport and processing of wafers under high-temperature and ultra-clean environments.*
  • Related Blog
  • Reviews

  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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