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China Ceramic Wafer Processing Manufacturers, Suppliers, Factory

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Ceramic Wafer Processing, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which might be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we will continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

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    Semicorex Solar Graphite Boat, a precision-engineered wafer holder designed to meet the exacting demands of high-temperature semiconductor processing. Crafted from premium-grade graphite, this innovative boat offers unparalleled thermal stability and durability, ensuring optimal performance in even the most demanding furnace environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Vacuum Chuck

    Alumina Vacuum Chuck

    Semicorex Alumina Vacuum Chuck is a precision holding device designed for advanced manufacturing and research applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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    Semicorex Guide Ring with CVD tantalum carbide coating is a highly reliable and advanced component for SiC single crystal growth furnaces. Its superior material properties, durability, and precision-engineered design make it an essential part of the crystal growth process. By choosing our high-quality Guide Ring, manufacturers can achieve enhanced process stability, higher yield rates, and superior SiC crystal quality.*
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  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

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  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

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