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China Ceramic Wafer Processing Manufacturers, Suppliers, Factory

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Ceramic Wafer Processing, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which might be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we will continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

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  • CVD and CVI Vacuum Furnace

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated products in China. We provide custom furnace solutions. Our CVD and CVI Vacuum Furnace has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Ceramic Cantilever Paddle

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    Large wafer loading force silicon carbide SiC ceramic cantilever paddle is suitable for a robot automatic loading and handling system because it has stable performance, non-deformation in high temperature and large wafer loading force. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Carbon Ceramic Brake Pads

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  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Coating in the thermal field of semiconductor silicon single crystals

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  • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

    Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

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