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    • China ceramic substrate Manufacturers, Suppliers, Factory

    Semicorex has been producing ceramic substrate for many years and is one of the professional ceramic substrate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • MOCVD Susceptor for Epitaxial Growth

      MOCVD Susceptor for Epitaxial Growth

      Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
    • End Effector for Wafer Handling

      End Effector for Wafer Handling

      Semicorex End Effector for Wafer Handling are dimensionally precise and thermally stable for wafer processing. We have been manufacturer and supplier of silicon carbide coating elements for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Glass-like Carbon Coated Rigid Felt

      Glass-like Carbon Coated Rigid Felt

      The Glass-like Carbon Coated Rigid Felt, a signature product of Semicorex,consists of a Carbon Fiber rigid felt substrate enveloped by a glass-like carbon coating, combining the inherent strength of the felt with the exceptional surface properties of the glass-like carbon. Together, they create a material that stands out for its performance under extreme conditions.**
    • SiC MOCVD Inner Segment

      SiC MOCVD Inner Segment

      Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
    • Quartz Crucible in Semiconductor

      Quartz Crucible in Semiconductor

      Semicorex cutting-edge Quartz Crucible in Semiconductor, the epitome of precision and reliability for semiconductor processing. Crafted from semiconductor-grade quartz, this crucible is engineered to meet the demanding requirements of the semiconductor industry, ensuring optimal performance and efficiency in every application. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Sapphire Crystal Growth Heater

      Sapphire Crystal Growth Heater

      Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
    • Related Blog
    • Reviews

    • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

      The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

    • Surface Polishing of Silicon Wafers

      Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

    • How is Silicon Carbide Manufactured?

    • GaN vs SiC

      There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

    • The significance of porous graphite materials to SiC crystal growth

      Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

    • Crystal Orientation and Defects in Silicon Wafers

      The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

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