SiC coating is a thin layer onto the susceptor through the chemical vapor deposition(CVD) process. Silicon carbide material provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, which provides the material with high temperature and chemical resistance, excellent wear resistance as well as thermal conductivity.
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SiC coating possesses several unique advantages
High Temperature Resistance: CVD SiC coated susceptor can withstand high temperatures up to 1600°C without undergoing significant thermal degradation.
Chemical Resistance: The silicon carbide coating provides excellent resistance to a wide range of chemicals, including acids, alkalis, and organic solvents.
Wear Resistance: The SiC coating provides the material with excellent wear resistance, making it suitable for applications that involve high wear and tear.
Thermal Conductivity: The CVD SiC coating provides the material with high thermal conductivity, making it suitable for use in high-temperature applications that require efficient heat transfer.
High Strength and Stiffness: The silicon carbide coated susceptor provides the material with high strength and stiffness, making it suitable for applications that require high mechanical strength.
SiC coating is used in various applications
LED Manufacturing: CVD SiC coated susceptor is used in manufacturing processed of various LED types, including blue and green LED, UV LED and deep-UV LED, due to its high thermal conductivity and chemical resistance.
Mobile communication: CVD SiC coated susceptor is a crucial part of the HEMT to complete the GaN-on-SiC epitaxial process.
Semiconductor Processing: CVD SiC coated susceptor is used in the semiconductor industry for various applications, including wafer processing and epitaxial growth.
SiC coated graphite components
Made by Silicon Carbide Coating (SiC) graphite, the coating is applied by a CVD method to specific grades of high density graphite, so it can operate in the high temperature furnace with over 3000 °C in an inert atmosphere, 2200°C in vacuum.
The special properties and low mass of the material allow fast heating rates, uniform temperature distribution and outstanding precision in control.
Material data of Semicorex SiC Coating
Typical properties |
Units |
Values |
Structure |
|
FCC β phase |
Orientation |
Fraction (%) |
111 preferred |
Bulk density |
g/cm³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Thermal expansion 100–600 °C (212–1112 °F) |
10-6K-1 |
4.5 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Grain Size |
μm |
2~10 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Thermal conductivity |
(W/mK) |
300 |
Conclusion CVD SiC coated susceptor is a composite material that combines the properties of a susceptor and silicon carbide. This material possesses unique properties, including high temperature and chemical resistance, excellent wear resistance, high thermal conductivity, and high strength and stiffness. These properties make it an attractive material for various high-temperature applications, including semiconductor processing, chemical processing, heat treatment, solar cell manufacturing, and LED manufacturing.
Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
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Read MoreSend InquirySemicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
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Read MoreSend InquirySemicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
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