English
Home > Products> Vertical Graphite Susceptor 6 Inch

China Vertical Graphite Susceptor 6 Inch Manufacturers, Suppliers, Factory

Semicorex has been producing Vertical Graphite Susceptor 6 Inch for many years and is one of the professional Vertical Graphite Susceptor 6 Inch manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

Related Products

Hot Products

  • Quartz 12” Pedestal

    Quartz 12” Pedestal

    Semicorex Quartz 12” Pedestal is a highly specialized component designed for the diffusion process in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • TaC Ring

    TaC Ring

    Semicorex TaC ring is a high-performance component designed for SiC single crystal growth, ensuring optimal gas flow distribution and temperature control. Choose Semicorex for our expertise in advanced materials and precision engineering, providing durable and reliable solutions that enhance the efficiency and quality of your semiconductor processes.*
  • Liquid Phase Epitaxy (LPE) Reactor System

    Liquid Phase Epitaxy (LPE) Reactor System

    Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.
  • SiC Process Tube Liners

    SiC Process Tube Liners

    Semicorex SiC (Silicon Carbide) Process Tube Liners are crucial components in the production of semiconductors within environments that require high temperatures and high levels of purity. These SiC Process Tube Liners are specifically designed to endure extreme thermal conditions and maintain high levels of purity to ensure that the semiconductor manufacturing process is not compromised. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
  • Related Blog
  • Reviews

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Funds on Semiconductor projects

    Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • What is SOI

  • What is the advantage of silicon carbide?

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept