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    Constructed from silicon carbide of exceptional purity, The Semicorex High-Purity SiC Boat demonstrates superior thermal stability, mechanical robustness, and resistance to chemicals. This material selection is critical to diminish potential contamination, safeguard the wafers from harm, and endure the rigorous conditions encountered in semiconductor fabrication. Semicorex’s commitment to manufacturing and supplying market-leading quality products, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Ceramic Seal Part

    SiC Ceramic Seal Part

    Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
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  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Exploring the Future Prospects of Silicon Semiconductor Chips

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

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