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Bear "Customer very first, Quality first" in mind, we work closely with our customers and supply them with efficient and professional services for Siliconized Silicon Carbide,Semiconductor Materials,SiC Wafer,Deposition Semiconductor,Epitaxy Wafer, We have been self-assured to make excellent achievements within the future. We've been looking forward to becoming one within your most trusted suppliers.
Siliconized Silicon Carbide, Our company has already have pass the ISO standard and we're fully respect our customer 's patents and copyrights. If the customer provides their own designs, We will guarantee that they will likely be the only one can have that merchandise. We hoping that with our good products can bring our customers a great fortune.

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    SiC Powder

    Semicorex SiC Powder, also known as silicon carbide powder, is a finely ground material predominantly composed of N-type α-phase silicon carbide. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Ceramic Seal Ring

    SiC Ceramic Seal Ring

    The SiC Ceramic Seal Ring is renowned for its robust performance and durability. Semicorex offers high-quality SiC Ceramic Seal Rings that meet the stringent demands of modern industry. These rings have become indispensable in enhancing the efficiency and reliability of mechanical seals.**
  • AlN Ceramic Crucible

    AlN Ceramic Crucible

    Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
  • TaC coated seed crystal holder

    TaC coated seed crystal holder

    TaC coated seed crystal holder is a high-performance component specifically designed for the growth environment of semiconductor materials. As a leading manufacturer of TTaC coated seed crystal holders, semicorex offers you efficient core component solutions in the high-end semiconductor manufacturing field.
  • C/C Composite Fasteners

    C/C Composite Fasteners

    Semicorex's C/C composite fasteners made from high-performance carbon-carbon composite materials, which undergo precision machining to meet strict standards, all designed specifically for extreme high-temperature conditions. What makes these C/C composite fasteners stand out is their combination of low density, outstanding high-temperature resistance, superior thermal stability, and exceptional chemical resistance. These qualities together deliver a fastening solution that’s safe, dependable, and long-lasting, perfectly suited for high-end equipment.
  • Impervious graphite

    Impervious graphite

    Semicorex Impervious Graphite is a high-density, resin-impregnated graphite material engineered for exceptional strength, corrosion resistance, and thermal performance in demanding industrial environments. Semicorex delivers advanced impregnation technology, precise material control, and proven expertise in delivering durable, high-purity graphite components that ensure long-term reliability under extreme conditions.*
  • Related Blog
  • Reviews

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

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