China Silicon Carbide Process Carriers Manufacturers, Suppliers, Factory

At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.