English
Home > Products
  • Silicon Carbide Etching Fixture Plate

    • China Silicon Carbide Etching Fixture Plate Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Etching Fixture Plate for many years and is one of the professional Silicon Carbide Etching Fixture Plate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • SiC Coated ICP Etching Carrier

      SiC Coated ICP Etching Carrier

      Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Graphite Felt

      Graphite Felt

      Semicorex Graphite Felt is a flexible, lightweight, and highly efficient thermal insulation material, ideal for high-temperature applications. Semicorex offers superior-quality graphite felts that deliver exceptional durability and reliability, making them the optimal choice for industries demanding advanced insulation solutions.*
    • Aluminum Nitride Ceramic Chuck

      Aluminum Nitride Ceramic Chuck

      Semicorex Aluminum Nitride Ceramic Chuck represents a cutting-edge solution for semiconductor wafer processing, specifically designed to securely hold wafers in place during various stages of manufacturing. Functioning as an electrostatic chuck (ESC), this innovative device leverages the exceptional properties of aluminum nitride ceramic to ensure precise and reliable wafer retention. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Isostatic Graphite Crucibles for Melting

      Isostatic Graphite Crucibles for Melting

      Semicorex Isostatic Graphite Crucibles for Melting are produced using isostatic pressing techniques, which enhance their material density and mechanical properties. This results in a vessel that not only withstands the extreme temperatures and corrosive environments typical of semiconductor processing but also offers long-term durability. The crucibles’ robustness ensures they can handle repeated thermal cycling without degradation, thereby providing consistent performance over extended operational periods. We at Semicorex are dedicated to manufacturing and supplying high-performance Isostatic Graphite Crucibles for Melting that fuse quality with cost-efficiency.
    • AIN Substrate

      AIN Substrate

      Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
    • Semiconductor Quartz Bell Jar

      Semiconductor Quartz Bell Jar

      Semicorex Semiconductor Quartz Bell Jar is a specialized vessel constructed from high-purity quartz material. Its design is tailored to meet the stringent requirements of semiconductor manufacturing processes, where purity and cleanliness are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Methods of AlN Crystal Growth

      AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

    • Homoepitaxy and Heteroepitaxy Explained Simply

      Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

    • What is epitaxial wafer process?

      Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

    • Various applications of quartz in semiconductor manufacturing

      At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

    • Exploring the Future Prospects of Silicon Semiconductor Chips

    • Can you grind silicon carbide?

      Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept