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  • Silicon Carbide Coated Graphite Trays

    • China Silicon Carbide Coated Graphite Trays Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Coated Graphite Trays for many years and is one of the professional Silicon Carbide Coated Graphite Trays manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Ceramic Wafer Boat

      Ceramic Wafer Boat

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Silicon Carbide Graphite Substrate MOCVD Susceptor

      Silicon Carbide Graphite Substrate MOCVD Susceptor

      Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
    • Silicon Carbide SiC Coated Barrel Susceptor

      Silicon Carbide SiC Coated Barrel Susceptor

      Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Vacuum Chuck

      SiC Vacuum Chuck

      Semicorex SiC Vacuum Chuck represents a pinnacle of precision engineering tailored for the demanding semiconductor industry. Crafted from graphite substrates and enhanced through state-of-the-art Chemical Vapor Deposition (CVD) techniques, this innovative device seamlessly integrates the unparalleled properties of Silicon Carbide (SiC) coating. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Al2O3 Cutting Blade

      Al2O3 Cutting Blade

      Semicorex Al2O3 Cutting Blade,has been meticulously engineered to meet the rigorous demands of cutting processes across a spectrum of industries, including but not limited to film and foil, medical applications, and the intricate assembly of electronic components.**
    • SiC-Coated Barrel Susceptor

      SiC-Coated Barrel Susceptor

      With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
    • Related Blog
    • Reviews

    • Silicon Carbide Substrate

      The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

    • Dislocation in SiC crystals

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

      This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

    • Method of GaN Crystal Growth

      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

    • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

      4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

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