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    • China sapphire crystal growth Manufacturers, Suppliers, Factory

    Semicorex has been producing sapphire crystal growth for many years and is one of the professional sapphire crystal growth manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Boat for Wafer Handling

      SiC Boat for Wafer Handling

      Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
    • SiC Coated Epitaxy Disc

      SiC Coated Epitaxy Disc

      There are extensive properties of Semicorex SiC Coated Epitaxy Disc that make it an indispensable component in semiconductor manufacturing, where the precision, durability, and robustness of equipment are paramount for the success of high-tech semiconductor devices. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Coated Epitaxy Disc that fuse quality with cost-efficiency.**
    • Wafer Carriers

      Wafer Carriers

      Semicorex Wafer carriers, also known as wafer cassettes, play a critical role in maintaining these standards. These specialized containers are designed to safely store and transport silicon wafers, which are the foundational material for semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Ceramic End Effector

      Ceramic End Effector

      Semicorex is your partner for advanced graphite components and assemblies to support higher throughput and better yields in your semiconductor processing equipment. Our materials experts are ready to work with you to develop the optimal right solution for your wafer handling, heating, and processing requirements. Our Ceramic End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Alumina Ceramic Vacuum Chuck

      Alumina Ceramic Vacuum Chuck

      Semicorex Alumina Ceramic Vacuum Chuck is applied in the wafer thinning and grinding processes of semiconductor manufacturing, serving as an indispensable tool for achieving high-precision and reliable semiconductor production.**
    • Gas Inlet Ring for Semiconductor Equipment

      Gas Inlet Ring for Semiconductor Equipment

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Gas Inlet Ring for Semiconductor Equipment has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Differences between SiC crystals with different structures

      Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Final polishing of the silicon wafer surface

      To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

    • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

      Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

    • Korean memory chips plummeted

    • Why choose SiC-coated graphite susceptors?

      Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

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