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    • China powdered activated carbon treatment Manufacturers, Suppliers, Factory

    Semicorex has been producing powdered activated carbon treatment for many years and is one of the professional powdered activated carbon treatment manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Semicorex SiC Furnace Tube is an indispensable asset for semiconductor manufacturers aiming to enhance their diffusion processes. With its unparalleled material properties, precision design, and ease of use, our SiC Furnace Tube is the ideal solution for improving yield and product quality. Trust Semicorex to provide the cutting-edge solutions you need to excel in the fast-paced semiconductor landscape.*
    • High-Purity SiC Boat

      High-Purity SiC Boat

      Constructed from silicon carbide of exceptional purity, The Semicorex High-Purity SiC Boat demonstrates superior thermal stability, mechanical robustness, and resistance to chemicals. This material selection is critical to diminish potential contamination, safeguard the wafers from harm, and endure the rigorous conditions encountered in semiconductor fabrication. Semicorex’s commitment to manufacturing and supplying market-leading quality products, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • Vertical Silicon Boat

      Vertical Silicon Boat

      Semicorex Vertical Silicon Boat is a critical component used in semiconductor manufacturing processes, Semicorex delivers customized vertical Silicon boat with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
    • C/C Composite Crucible

      C/C Composite Crucible

      Semicorex C/C Composite Crucible from Semicorex is a high-performance crucible engineered for crystal growth, offering exceptional thermal stability, durability, and chemical resistance. Choosing Semicorex ensures you receive a reliable, precision-manufactured product tailored to meet the rigorous demands of high-temperature crystal growth applications.*
    • Tantalum Carbide Crucible

      Tantalum Carbide Crucible

      Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Wafer Transfer Hand

      Wafer Transfer Hand

      Introducing the Wafer Transfer Hand, designed and manufactured by our team of experts in China, this product is specifically engineered to ensure the safe and efficient transfer of wafers from one location to another, without damaging the delicate surface.
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    • What is Thermal Field?

      In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

    • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

      Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

    • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

      The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

    • How Are Ceramic Electrostatic Chucks Actually Produced?

      In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

    • GaN Single Crystal

      Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

    • GaN Industry Applications

      The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

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