English
Home > Products > graphite conductive

China graphite conductive Manufacturers, Suppliers, Factory

Every single member from our large efficiency profits team values customers' requirements and organization communication for graphite conductive,graphite insulation,graphite insulation board,high purity graphite,machining graphite, In addition, we would properly guideline the shoppers about the application techniques to adopt our products and solutions as well as the way to select appropriate materials.
graphite conductive, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we've been doing for. We are an absolutely reliable partner for yourself in China. Of course, other services, like consulting, can be offered too.

Related Products

Hot Products

  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Half Parts Drum Products Epitaxial Part

    Half Parts Drum Products Epitaxial Part

    Enhance the functionality and efficiency of your semiconductor devices with our cutting-edge Half Parts Drum Products Epitaxial Part. Specifically designed for the LPE reactor's intake components, this semi-cylindrical accessory plays a pivotal role in optimizing your semiconductor processes.
    Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 8 inch EPI Susceptor

    8 inch EPI Susceptor

    Semicorex 8 Inch EPI Susceptor is a high-performance SiC-coated graphite wafer carrier designed for use in epitaxial deposition equipment. Choosing Semicorex ensures superior material purity, precision manufacturing, and consistent product reliability tailored to meet the demanding standards of the semiconductor industry.*
  • SiC Focus Ring

    SiC Focus Ring

    Semicorex SiC Focus Ring is a high-purity silicon carbide ring component designed to optimize plasma distribution and wafer process uniformity in semiconductor manufacturing. Choosing Semicorex means ensuring consistent quality, advanced material engineering, and reliable performance trusted by leading semiconductor fabs worldwide.*
  • Related Blog
  • Reviews

  • Coating in the thermal field of semiconductor silicon single crystals

    The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept