China ESC chuck Manufacturers, Suppliers, Factory

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.