China EPITAXIAL PROCESS Manufacturers, Suppliers, Factory

Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.