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    • China Epi Material Manufacturers, Suppliers, Factory

    Semicorex has been producing Epi Material for many years and is one of the professional Epi Material manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • SiC Wafer Transfer Hand

      SiC Wafer Transfer Hand

      Semicorex SiC Wafer Transfer Hand stands as a cornerstone of automation within the semiconductor manufacturing process, serving as a sophisticated robotic tool for the precise and efficient handling of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • PBN/PG Heaters

      PBN/PG Heaters

      Semicorex PBN/PG Heaters (Pyrolytic Boron Nitride/Pyrolytic Graphite) are engineered from advanced Boron Nitride ceramic materials, meticulously crafted to withstand extreme temperatures exceeding 1700°C. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • AlN Ceramic Crucible

      AlN Ceramic Crucible

      Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
    • SiC Seal Ring

      SiC Seal Ring

      Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Barrel Susceptor with SiC Coating in Semiconductor

      Barrel Susceptor with SiC Coating in Semiconductor

      If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
    • Graphite Susceptor with SiC Coating

      Graphite Susceptor with SiC Coating

      Semicorex Graphite Susceptor with SiC Coating is an essential component designed for silicon epitaxy processes in Applied Materials and LPE (Liquid Phase Epitaxy) units. Crafted from high-quality graphite material coated with Silicon Carbide (SiC), this susceptor ensures superior performance and longevity in semiconductor manufacturing environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Why choose SiC-coated graphite susceptors?

      Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

    • SiC Single Crystal Substrate Processing

      Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

    • Introducing Silicon Material

      Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

    • How to do CMP Process

      In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

    • Dislocation in SiC crystals

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

    • What is CMP Process

      In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

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