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China Coated Of Graphite Manufacturers, Suppliers, Factory

Semicorex has been producing Coated Of Graphite for many years and is one of the professional Coated Of Graphite manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Wafer Loader Arm

    Semicorex Wafer Loader Arm's ability to withstand extreme conditions while maintaining exceptional performance underscores its value in optimizing manufacturing processes and achieving higher levels of productivity and quality.The integration of high-purity alumina ceramic material ensures superior cleanliness, precision, and durability.**
  • Robot End Effector

    Robot End Effector

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • 10x10mm Nonpolar M-plane Aluminum Substrate

    10x10mm Nonpolar M-plane Aluminum Substrate

    The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • SiC Parts Abdeck Segmenten

    SiC Parts Abdeck Segmenten

    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • CVD TaC Coated Ring

    CVD TaC Coated Ring

    Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
  • Ceramic End Effector

    Ceramic End Effector

    Semicorex is your partner for advanced graphite components and assemblies to support higher throughput and better yields in your semiconductor processing equipment. Our materials experts are ready to work with you to develop the optimal right solution for your wafer handling, heating, and processing requirements. Our Ceramic End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Infineon Unveils World’s First 300mm Power GaN Wafer

    Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

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