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    • China chuck esc Manufacturers, Suppliers, Factory

    Semicorex has been producing chuck esc for many years and is one of the professional chuck esc manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Graphite Waferholder

      Graphite Waferholder

      Semicorex SiC Coated Graphite Waferholder is a high-performance component designed for precise wafer handling in semiconductor epitaxy growth processes. Semicorex’s expertise in advanced materials and manufacturing ensures our products offer unmatched reliability, durability, and customization for optimal semiconductor production.*
    • TaC Coated Graphite Parts

      TaC Coated Graphite Parts

      Semicorex TaC Coated Graphite Parts are precision-crafted components that are specially designed to withstand the demanding environment of semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Coated Graphite Barrel Susceptor

      SiC Coated Graphite Barrel Susceptor

      If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
    • Carbon Fiber Rigid Felt

      Carbon Fiber Rigid Felt

      Semicorex Carbon Fiber Rigid Felt is a high-performance material designed for use in high-temperature environments, particularly in semiconductor crystal growth processes, where it serves as crucial components like crucibles and insulation linings. Semicorex offers advanced, high-quality materials with superior thermal stability, dimensional accuracy, and durability, ensuring optimal performance and efficiency in semiconductor manufacturing.*
    • TaC Tantalum Carbide Coated Plate

      TaC Tantalum Carbide Coated Plate

      Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Semiconductor Wafer Boat

      Semiconductor Wafer Boat

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

      Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

    • Silicon Carbide Substrate

      The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

    • Silicon Carbide Heating Elements

      In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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