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To continually improve the management procedure by virtue in the rule of "sincerely, great religion and good quality are the base of company development", we commonly absorb the essence of associated products and solutions internationally, and regularly build new solutions to meet the calls for of consumers for ceramic plate,SiN Plates,SiN Substrates,silicon nitride substrate,silicon nitride, We are really proud of your great name from our shoppers for our products' reputable quality.
ceramic plate, Strong infrastructure is the require of any organization. We have been backed with a robust infrastructural facility that enables us to manufacture, store, quality check and dispatch our merchandise worldwide. To maintain smooth work flow, we have now sectioned our infrastructure into a number of departments. All these departments are functional with latest tools, modernized machines and equipment. Owing to which, we're able to accomplish voluminous production without compromising upon the quality.

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    Semicorex SiC ICP Etching Plate is an advanced and indispensable component in the semiconductor industry, designed to enhance the precision and efficiency of etching processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • 6 inch SiC Boat

    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • Alumina Plate Flange

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    Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Aluminum Nitride Wafer Holder

    Aluminum Nitride Wafer Holder

    You can rest assured to buy Aluminum Nitride Wafer Holder from our factory. Semicorex Aluminum Nitride (AlN) Wafer Holder stands as an indispensable component within the realm of semiconductor processing, serving as a pivotal platform for securely holding delicate wafers throughout various stages of fabrication. Crafted from high-quality aluminum nitride material, renowned for its exceptional thermal conductivity, mechanical strength, and electrical insulation properties, this wafer holder ensures optimal conditions for precise and efficient semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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