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China carrier tray Manufacturers, Suppliers, Factory

Semicorex has been producing carrier tray for many years and is one of the professional carrier tray manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • SiC Disc Susceptor

    SiC Disc Susceptor

    Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
  • SiC Coated Ring

    SiC Coated Ring

    Semicorex SiC Coated Ring is a crucial component in the semiconductor epitaxial growth process, designed to meet the demanding requirements of modern semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Heater For Hot Zone

    Graphite Heater For Hot Zone

    Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
  • Quartz Bell Jar

    Quartz Bell Jar

    Semicorex Quartz Bell Jar stands as a crucial component within the semiconductor industry, embodying both functionality and precision. Crafted from high-purity quartz, this bell-shaped enclosure serves as a vessel for various processes critical to semiconductor manufacturing, notably epitaxial growth and chemical vapor deposition (CVD). Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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