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China TaC Coating;wafer carrier trays;Semiconductor Shower Head;semiconductor components;spare parts for epitaxial;CVD TaC;CVD coating;tantalum carbide;tantalum carbide coating;MOCVD Manufacturers, Suppliers, Factory

Semicorex has been producing TaC Coating;wafer carrier trays;Semiconductor Shower Head;semiconductor components;spare parts for epitaxial;CVD TaC;CVD coating;tantalum carbide;tantalum carbide coating;MOCVD for many years and is one of the professional TaC Coating;wafer carrier trays;Semiconductor Shower Head;semiconductor components;spare parts for epitaxial;CVD TaC;CVD coating;tantalum carbide;tantalum carbide coating;MOCVD manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • SiC Plate for ICP Etching Process

    SiC Plate for ICP Etching Process

    Semicorex's SiC Plate for ICP Etching Process is the perfect solution for high-temperature and harsh chemical processing requirements in thin film deposition and wafer handling. Our product boasts superior heat resistance and even thermal uniformity, ensuring consistent epi layer thickness and resistance. With a clean and smooth surface, our high-purity SiC crystal coating provides optimal handling for pristine wafers.
  • 4

    4" 6" 8" N-type SiC Ingot

    Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Modified C/SiC Composites

    Modified C/SiC Composites

    Semicorex provide several types of modified C/SiC Composites(Ceramic Matrix Composites, CMCs), Zirconium and Hafnium, Silicon. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC/SiC Ceramic Matrix Composites

    SiC/SiC Ceramic Matrix Composites

    SiC/SiC ceramic matrix composites (CMCs) are an innovative solution to improve aerospace applications, specifically turbine engine components and thermal protection systems. By utilizing SiC, the performance and durability of these critical components can be significantly enhanced, resulting in safer and more efficient aerospace technologies. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • RTP Graphite Carrier Plate

    RTP Graphite Carrier Plate

    Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Silicon Wafer

    Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

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