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China aluminum nitride ceramic Manufacturers, Suppliers, Factory

Semicorex has been producing aluminum nitride ceramic for many years and is one of the professional aluminum nitride ceramic manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Process Tube for Diffusion Furnaces

    Process Tube for Diffusion Furnaces

    Semicorex process tube for diffusion furnaces is a specialized component used in the manufacturing of semiconductor devices. It is designed to provide a controlled environment for diffusion processes, where impurities are introduced into the semiconductor wafers to modify their electrical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Carbon Fiber Rigid Felt

    Carbon Fiber Rigid Felt

    Semicorex Carbon Fiber Rigid Felt is a high-performance material designed for use in high-temperature environments, particularly in semiconductor crystal growth processes, where it serves as crucial components like crucibles and insulation linings. Semicorex offers advanced, high-quality materials with superior thermal stability, dimensional accuracy, and durability, ensuring optimal performance and efficiency in semiconductor manufacturing.*
  • Silicon Nitride Ceramic Substrate

    Silicon Nitride Ceramic Substrate

    Silicon Nitride Ceramic Substrate, is a versatile and high-performance material widely used in various technological applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz 12” Pedestal

    Quartz 12” Pedestal

    Semicorex Quartz 12” Pedestal is a highly specialized component designed for the diffusion process in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • Discussing CVD furnace

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    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

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    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

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    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

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