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    Semicorex's SiC Plate for ICP Etching Process is the perfect solution for high-temperature and harsh chemical processing requirements in thin film deposition and wafer handling. Our product boasts superior heat resistance and even thermal uniformity, ensuring consistent epi layer thickness and resistance. With a clean and smooth surface, our high-purity SiC crystal coating provides optimal handling for pristine wafers.
  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Alumina Ceramic Wafer Chucks

    Alumina Ceramic Wafer Chucks

    Semicorex Alumina Ceramic Wafer Chucks not limited to a single industry; their unique properties make them suitable for a wide range of applications. In the semiconductor sector, they are used for holding wafers during chip fabrication. In the chemical industry, their corrosion resistance makes them ideal for handling aggressive substances. Environmental applications benefit from their stability and resistance to wear, while their mechanical properties are leveraged in the development of functional materials.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Wafer Chucks that fuse quality with cost-efficiency.
  • SOI Wafer

    SOI Wafer

    Semicorex SOI Wafer is a high-performance semiconductor substrate that features a thin silicon layer atop an insulating material, optimizing device efficiency, speed, and power consumption. With customizable options, advanced manufacturing techniques, and a focus on quality, Semicorex provides SOI wafers that ensure superior performance and reliability for a wide range of cutting-edge applications.*
  • Graphite Ring

    Graphite Ring

    Semicorex Graphite Ring's ability to withstand extreme conditions and ease of installation make them an indispensable component in industries such as hydraulics, pneumatics, and heat exchangers.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
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    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

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