SiC coating is a thin layer onto the susceptor through the chemical vapor deposition(CVD) process. Silicon carbide material provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, which provides the material with high temperature and chemical resistance, excellent wear resistance as well as thermal conductivity.
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SiC coating possesses several unique advantages
High Temperature Resistance: CVD SiC coated susceptor can withstand high temperatures up to 1600°C without undergoing significant thermal degradation.
Chemical Resistance: The silicon carbide coating provides excellent resistance to a wide range of chemicals, including acids, alkalis, and organic solvents.
Wear Resistance: The SiC coating provides the material with excellent wear resistance, making it suitable for applications that involve high wear and tear.
Thermal Conductivity: The CVD SiC coating provides the material with high thermal conductivity, making it suitable for use in high-temperature applications that require efficient heat transfer.
High Strength and Stiffness: The silicon carbide coated susceptor provides the material with high strength and stiffness, making it suitable for applications that require high mechanical strength.
SiC coating is used in various applications
LED Manufacturing: CVD SiC coated susceptor is used in manufacturing processed of various LED types, including blue and green LED, UV LED and deep-UV LED, due to its high thermal conductivity and chemical resistance.
Mobile communication: CVD SiC coated susceptor is a crucial part of the HEMT to complete the GaN-on-SiC epitaxial process.
Semiconductor Processing: CVD SiC coated susceptor is used in the semiconductor industry for various applications, including wafer processing and epitaxial growth.
SiC coated graphite components
Made by Silicon Carbide Coating (SiC) graphite, the coating is applied by a CVD method to specific grades of high density graphite, so it can operate in the high temperature furnace with over 3000 °C in an inert atmosphere, 2200°C in vacuum.
The special properties and low mass of the material allow fast heating rates, uniform temperature distribution and outstanding precision in control.
Material data of Semicorex SiC Coating
Typical properties |
Units |
Values |
Structure |
|
FCC β phase |
Orientation |
Fraction (%) |
111 preferred |
Bulk density |
g/cm³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Thermal expansion 100–600 °C (212–1112 °F) |
10-6K-1 |
4.5 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Grain Size |
μm |
2~10 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Thermal conductivity |
(W/mK) |
300 |
Conclusion CVD SiC coated susceptor is a composite material that combines the properties of a susceptor and silicon carbide. This material possesses unique properties, including high temperature and chemical resistance, excellent wear resistance, high thermal conductivity, and high strength and stiffness. These properties make it an attractive material for various high-temperature applications, including semiconductor processing, chemical processing, heat treatment, solar cell manufacturing, and LED manufacturing.
Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
Read MoreSend InquirySemicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
Read MoreSend InquirySemicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
Read MoreSend InquirySemicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
Read MoreSend InquirySemicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
Read MoreSend InquirySemicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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