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    • China Wafer Transfer Cassette Manufacturers, Suppliers, Factory

    Semicorex has been producing Wafer Transfer Cassette for many years and is one of the professional Wafer Transfer Cassette manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Graphite Single Silicon Pulling Tools

      Graphite Single Silicon Pulling Tools

      Semicorex Graphite Single Silicon Pulling Tools emerge as unsung heroes in the fiery crucible of crystal growth furnaces, where temperatures soar and precision reigns supreme. Their remarkable properties, honed through innovative manufacturing, make them essential for coaxing flawless single crystal silicon into existence.**
    • Monocrystalline Silicon Wafer Susceptor

      Monocrystalline Silicon Wafer Susceptor

      Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
    • RTP Graphite Carrier Plate

      RTP Graphite Carrier Plate

      Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
    • 6 Inch N-type SiC Wafer

      6 Inch N-type SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • P-type SiC Substrate Wafer

      P-type SiC Substrate Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our P-type SiC Substrate Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Coated Plate Carriers for MOCVD

      SiC Coated Plate Carriers for MOCVD

      Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.
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    • Reviews

    • Homoepitaxy and Heteroepitaxy Explained Simply

      Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

    • What is Thermal Field?

      In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • Monocrystalline Silicon Manufacturing

      The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

    • How to classify semiconductors

      There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

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