China Wafer Shipper Manufacturers, Suppliers, Factory

In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

The processing of 4H-SiC substrate mainly includes the following steps:

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.