English
Home > Products
  • Wafer Handling Vacuum Chuck

    • China Wafer Handling Vacuum Chuck Manufacturers, Suppliers, Factory

    Semicorex has been producing Wafer Handling Vacuum Chuck for many years and is one of the professional Wafer Handling Vacuum Chuck manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Monocrystalline Silicon Wafer Susceptor

      Monocrystalline Silicon Wafer Susceptor

      Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
    • SiC Parts Abdeck Segmenten

      SiC Parts Abdeck Segmenten

      Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
    • Silicon Carbide Wafer Boat

      Silicon Carbide Wafer Boat

      Semicorex engineers semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. Our Silicon Carbide Wafer Boat has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC-Coated Crystal Growth Susceptor

      SiC-Coated Crystal Growth Susceptor

      With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
    • Tantalum Carbide Rings

      Tantalum Carbide Rings

      Semicorex Tantalum Carbide rings are critical components used in advanced semiconductor manufacturing processes. Known for their exceptional hardness, high melting point, and chemical inertness, At Semicorex, we are dedicated to delivering products that meet the highest standards of quality and performance, ensuring that our clients remain at the forefront of innovation in the semiconductor industry.*
    • Silicon Carbide SiC Coated Barrel Susceptor

      Silicon Carbide SiC Coated Barrel Susceptor

      Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is P-type SiC wafer?

      A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • Korean memory chips plummeted

    • What is a MOCVD system?

    • Doping Control in Sublimation SiC Growth

      Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept