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  • Silicon Carbide Coated Wafer Holders

    • China Silicon Carbide Coated Wafer Holders Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Coated Wafer Holders for many years and is one of the professional Silicon Carbide Coated Wafer Holders manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Wafer Susceptors for MOCVD

      SiC Wafer Susceptors for MOCVD

      The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
    • Robot End Effector

      Robot End Effector

      Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • EPI 3 1/4

      EPI 3 1/4" Barrel Susceptor

      Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
    • PBN Ceramic Disc

      PBN Ceramic Disc

      PBN Ceramic Disc by Semicorex is synthesized through an intricate chemical vapor deposition (CVD) process, utilizing boron trichloride (BCl3) and ammonia (NH3) at elevated temperatures and low pressures. This method of synthesis results in a material of exceptional purity and structural integrity, making it indispensable for a variety of applications within the semiconductor industry.**
    • Tantalum Carbide Coating Guide Ring

      Tantalum Carbide Coating Guide Ring

      Semicorex Tantalum Carbide Coating Guide Ring is an advanced component specifically designed for the semiconductor industry, playing a crucial role in the growth of Silicon Carbide (SiC) crystals. This product is engineered to meet the stringent demands of high-temperature and high-stress environments inherent in semiconductor crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • High-purity Porous Graphite Material

      High-purity Porous Graphite Material

      As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Dislocation in SiC crystals

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

    • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

      As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

    • Method of GaN Crystal Growth

      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

    • Silicon Wafer

      Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

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