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Our pursuit and company goal is to "Always satisfy our customer requirements". We continue to develop and design superior quality products for both our old and new customers and achieve a win-win prospect for our clients as well as us for Wafer Cassette Box,Wafer Cassettes,PFA cassette,wafer carrier,semi standard cassette, Never-ending improvement and striving for 0% deficiency are our two main good quality policies. Should you need anything, do not hesitate to call us.
Wafer Cassette Box, Our company absorbs new ideas, strict quality control, a full range of service tracking, and adhere to make high-quality products. Our business aims to "honest and trustworthy, favorable price, customer first", so we won the trust of the majority of customers! If you are interested in our items and services, remember to do not hesitate to contact us!

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    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

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    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

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    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

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    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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