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    • China silicon nitride ceramic Manufacturers, Suppliers, Factory

    Semicorex has been producing silicon nitride ceramic for many years and is one of the professional silicon nitride ceramic manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Tantalum Carbide Coated Graphite Susceptor

      Tantalum Carbide Coated Graphite Susceptor

      Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • PBN Heaters

      PBN Heaters

      Semicorex PBN Heaters boast a sophisticated triple-layered design engineered to redefine performance benchmarks. At its core lies a foundation crafted from high-purity pyrolytic boron nitride (PBN), renowned for its exceptional thermal conductivity and robust structural integrity. we look forward to becoming your long-term partner in China.
    • MOCVD Epitaxy Susceptor

      MOCVD Epitaxy Susceptor

      Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
    • Porous Graphite Materials for Single Crystal SiC Growth Applications

      Porous Graphite Materials for Single Crystal SiC Growth Applications

      Semicorex Porous Graphite Materials for Single Crystal SiC Growth Applications, is a specialized material used in the semiconductor processing. This crucial piece of equipment plays a pivotal role on the quality of single crystal SiC. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Zirconia Ceramic Nozzle

      Zirconia Ceramic Nozzle

      Semicorex Zirconia Ceramic Nozzle, crafted with meticulous attention to detail, this nozzle stands as the epitome of excellence in controlling the flow rate of both gases and liquids with unparalleled uniformity and precision. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Alumina Ceramic Robotic Arm

      Alumina Ceramic Robotic Arm

      Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
    • Related Blog
    • Reviews

    • What is a semiconductor?

      Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • What is Electrostatic Chuck(ESC)?

      In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

    • Why choose SiC-coated graphite susceptors?

      Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

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