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    • China Sic Sealing Rings Manufacturers, Suppliers, Factory

    Semicorex has been producing Sic Sealing Rings for many years and is one of the professional Sic Sealing Rings manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • MOCVD SiC Coated Graphite Susceptor

      MOCVD SiC Coated Graphite Susceptor

      Semicorex MOCVD SiC Coated Graphite Susceptor is an advanced and specialized component used in the Metal-Organic Chemical Vapor Deposition process, a crucial technique in the production of semiconductors, optoelectronic devices, and other advanced materials. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • MOCVD Cover Star Disc Plate for Wafer Epitaxy

      MOCVD Cover Star Disc Plate for Wafer Epitaxy

      Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
    • CVD SiC Coated Graphite Pancake Susceptor

      CVD SiC Coated Graphite Pancake Susceptor

      Semicorex provides high-quality CVD SiC coated graphite pancake susceptor. We have been manufacturer and supplier of graphite materials for many years. Our CVD SiC coated graphite pancake susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      SiC Coating Graphite Substrate Wafer Carriers for MOCVD

      You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
    • SiC Coated Graphite Susceptor for MOCVD

      SiC Coated Graphite Susceptor for MOCVD

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Semiconductor SiC Components for Epitaxial

      Semiconductor SiC Components for Epitaxial

      Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

      High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

    • Doping Control in Sublimation SiC Growth

      Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

    • GaN and SiC: Coexistence or Substitution?

      The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

    • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

      The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

    • What is CMP Process

      In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

    • Method for preparing SiC powder

      Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

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