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    • China Sic Gas Inlet Ring Manufacturers, Suppliers, Factory

    Semicorex has been producing Sic Gas Inlet Ring for many years and is one of the professional Sic Gas Inlet Ring manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      TaC Coating Jig

      Semicorex TaC Coating Jig stands as a pivotal component within the semiconductor manufacturing process, crafted meticulously from graphite and fortified with a resilient layer of tantalum carbide coating. This crucial equipment element embodies a fusion of cutting-edge materials science and precision engineering, designed to uphold stringent operational demands and exacting standards prevalent in semiconductor fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coating Halfmoon Part

      Tantalum Carbide Coating Halfmoon Part

      Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SOI Wafers

      SOI Wafers

      Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
    • Second Half Parts for Lower Baffles in Epitaxial Process

      Second Half Parts for Lower Baffles in Epitaxial Process

      Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Boat Holder

      SiC Boat Holder

      The SiC Boat Holder by Semicorex is innovatively forged from SiC, explicitly tailored for pivotal roles within the photovoltaic, electronic, and semiconductor sectors. Engineered with precision, the Semicorex SiC Boat Holder offers a protective, stable milieu for wafers through every stage—be it processing, transit, or storage. Its meticulous design ensures precision in dimensions and evenness, crucial for minimizing wafer deformation and maximizing operational yield.
    • SiC ICP plate

      SiC ICP plate

      Semicorex SiC ICP plate is an advanced semiconductor component specifically engineered to meet the rigorous demands of modern semiconductor manufacturing processes. This high-performance product is designed with the latest silicon carbide (SiC) material technology, offering unparalleled durability, efficiency, and reliability, making it an essential component in the fabrication of cutting-edge semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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      SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

    • Applications of Gallium Oxide Wafer

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      ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

    • The first 6-inch Gallium Oxide substrate industrialization company

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    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

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