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    Semicorex Zirconia ZrO2 Robot Arm, a vital component in semiconductor processing for seamless wafer transfer and handling. Crafted to endure the rigorous demands of high-temperature, corrosive, and abrasive environments, this ceramic arm boasts unparalleled durability and reliability. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Wafer Chuck

    Silicon Carbide Wafer Chuck

    The Semicorex Silicon Carbide Wafer Chuck is an essential component in the semiconductor epitaxial process. It serves as a vacuum chuck to securely hold wafers during critical manufacturing stages. We are committed to delivering top-quality products at competitive prices, positioning ourselves to be your long-term partner in China.*
  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Fused Quartz Ring

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    The Fused Quartz Ring from Semicorex is a critical component designed specifically for the semiconductor etching process with exceptional purity, thermal stability, and chemical resistance. **
  • CVD TaC Coating Cover

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    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

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  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

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