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    • China sic crucible Manufacturers, Suppliers, Factory

    Semicorex has been producing sic crucible for many years and is one of the professional sic crucible manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • 6 Inch N-type SiC Wafer

      6 Inch N-type SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Ga2O3 Substrate

      Ga2O3 Substrate

      Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
    • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

      SiC Coated Barrel Susceptor for LPE Epitaxial Growth

      Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
    • Spare Parts in Epitaxial Growth

      Spare Parts in Epitaxial Growth

      Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • 4

      4" Gallium Oxide Substrates

      Semicorex 4" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 4" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
    • SiC Process Tube

      SiC Process Tube

      SiC Process Tube is a tube shape reactor in heat treatment for wafer processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is graphitization degree?

      The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

    • GaN vs SiC

      There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

    • Substrate and Epitaxy

      In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

    • Knowing GaN

      Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

      Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

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