China SiC Coated Graphite Carriers Manufacturers, Suppliers, Factory

Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.

With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.

Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.

Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.