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We also supply merchandise sourcing and flight consolidation companies. We now have our very own manufacturing facility and sourcing business. We could present you with almost every kind of product relevant to our solution array for SiC Coated Graphite Carriers,Etch Carrier(ICP/PSS),SiC Wafer Holder,Silicon Carbide-Coated Wafer Holder,MOCVD Wafer Carrier, Only for accomplish the good-quality product to meet customer's demand, all of our products have been strictly inspected before shipment.
SiC Coated Graphite Carriers, Our business activities and processes are engineered to make sure our customers have access to widest range of products with the shortest supply time lines. This achievement is made possible by our highly skilled and experienced team. We look for people who want to grow with us around the globe and stand out from the crowd. We now have people who embrace tomorrow, have vision, love stretching their minds and going far beyond what they thought was achievable.

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  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • SiC Plate for ICP Etching Process

    SiC Plate for ICP Etching Process

    Semicorex's SiC Plate for ICP Etching Process is the perfect solution for high-temperature and harsh chemical processing requirements in thin film deposition and wafer handling. Our product boasts superior heat resistance and even thermal uniformity, ensuring consistent epi layer thickness and resistance. With a clean and smooth surface, our high-purity SiC crystal coating provides optimal handling for pristine wafers.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Coated Epitaxy Disc

    SiC Coated Epitaxy Disc

    There are extensive properties of Semicorex SiC Coated Epitaxy Disc that make it an indispensable component in semiconductor manufacturing, where the precision, durability, and robustness of equipment are paramount for the success of high-tech semiconductor devices. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Coated Epitaxy Disc that fuse quality with cost-efficiency.**
  • TaC Coated Tube

    TaC Coated Tube

    Semicorex TaC Coated Tube represents a pinnacle of material science, engineered to withstand the extreme conditions encountered in advanced semiconductor fabrication. Created by applying a dense, uniform layer of TaC onto a high-purity isotropic graphite substrate via Chemical Vapor Deposition (CVD), the TaC Coated Tube offers a compelling combination of properties that surpass conventional materials in demanding high-temperature and chemically aggressive environments.**
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
  • Related Blog
  • Reviews

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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