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Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.