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We believe in: Innovation is our soul and spirit. Excellent is our life. Buyer want is our God for pure graphite,carbon graphite,graphite bearings;,graphite bushings,graphite sleeve, High-quality is factory's everyday living , Focus on customers' demand would be the source of organization survival and advancement, We adhere to honesty and good faith doing the job attitude, seeking forward towards your coming !
pure graphite, Our goods are produced with the best raw materials. Every moment, we constantly improve the production programme. In order to ensure better quality and service, we have been focusing on the production process. We have now got high praise by partner. We're looking forward to establishing business relationship with you.

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  • Porous Graphite Materials for Single Crystal SiC Growth Applications

    Porous Graphite Materials for Single Crystal SiC Growth Applications

    Semicorex Porous Graphite Materials for Single Crystal SiC Growth Applications, is a specialized material used in the semiconductor processing. This crucial piece of equipment plays a pivotal role on the quality of single crystal SiC. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    Semicorex TaC Coating Susceptor represents a pinnacle in material engineering, meticulously crafted from high-quality graphite and fortified with a tantalum carbide coating. Primarily engineered for employment within SiC crystal growth and SiC epitaxial processes, this innovative component stands as a beacon of durability and performance in extreme thermal and chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Sapphire Crystal Growth Insulator

    Sapphire Crystal Growth Insulator

    Semicorex Sapphire Crystal Growth Insulator play an indispensable role in the operation of sapphire single crystal furnaces, spearheading critical functions throughout the entirety of the crystal growth process. By maintaining a stable furnace temperature, these components significantly reduce energy loss and enhance the quality of the growing crystals. We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Insulator that fuse quality with cost-efficiency.
  • Graphite Heater For Hot Zone

    Graphite Heater For Hot Zone

    Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
  • C/C Composite Crucible

    C/C Composite Crucible

    Semicorex C/C Composite Crucible from Semicorex is a high-performance crucible engineered for crystal growth, offering exceptional thermal stability, durability, and chemical resistance. Choosing Semicorex ensures you receive a reliable, precision-manufactured product tailored to meet the rigorous demands of high-temperature crystal growth applications.*
  • Silicon Carbide Sleeve

    Silicon Carbide Sleeve

    Semicorex Silicon Carbide Sleeve is commonly used as a wear-resistant and corrosion-resistant liner for equipment such as cylinders, pumps, valves, sliding bearings, and grinder drums.
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  • What is CVD for SiC

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Understanding the Complete Semiconductor Device Fabrication Process

    The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • Semicorex technology for Specialty Graphite

    As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

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