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  • Polycrystalline Silicon Wafer

    • China Polycrystalline Silicon Wafer Manufacturers, Suppliers, Factory

    Semicorex has been producing Polycrystalline Silicon Wafer for many years and is one of the professional Polycrystalline Silicon Wafer manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Silicon Carbide Coated Barrel Susceptor

      Silicon Carbide Coated Barrel Susceptor

      Semicorex Silicon Carbide Coated Barrel Susceptor is a high-quality graphite product coated with high-purity SiC, offering exceptional heat and corrosion resistance. It is specifically designed for LPE applications in the semiconductor manufacturing industry.
    • Spare Parts in Epitaxial Growth

      Spare Parts in Epitaxial Growth

      Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Si Epitaxy

      Si Epitaxy

      Si epitaxy is a crucial technique in the semiconductor industry, as it enables the production of high-quality silicon films with tailored properties for various electronic and optoelectronic devices. . Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • LPE SiC-Epi Halfmoon

      LPE SiC-Epi Halfmoon

      Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
    • TaC Coating Graphite Cover

      TaC Coating Graphite Cover

      Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • CVD SiC Ring

      CVD SiC Ring

      Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What are the challenges of silicon carbide substrate production?

      Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

    • What is CVD process in semiconductor?

      Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

    • What is porous graphite?

      Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

    • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

      Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

    • TaC coating with CVD method

      Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

    • Doping Control in Sublimation SiC Growth

      Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

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