English
Home > Products > Plasma Edge Ring

China Plasma Edge Ring Manufacturers, Suppliers, Factory

Gaining purchaser gratification is our firm's intention eternally. We will make wonderful endeavours to build new and top-quality merchandise, satisfy your exclusive needs and provide you with pre-sale, on-sale and after-sale products and services for Plasma Edge Ring,Sic Edge Rings For Wafer Etching Process,Silicon Carbide Edge Ring,Semiconductor Edge Ring,Dicing Edge Ring, Our final goal is "To try the best, To be the Best". Please feel free to contact with us if you have any requirements.
Plasma Edge Ring, Our factory insists on the principle of "Quality First, Sustainable Development", and takes "Honest Business, Mutual Benefits" as our developable goal. All members sincerely thanks for all old and new customers' support. We are going to keep working hard and offering you the highest-quality products and solutions and service.Thanks.

Related Products

Hot Products

  • C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites is a new type of thermal structure/functional integration material that combines the advantages of metal, ceramic and carbon materials, and has the characteristics of high-temperature resistance, low density, high strength ratio, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, and no catastrophic damage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Transfer Hand

    SiC Wafer Transfer Hand

    Semicorex SiC Wafer Transfer Hand stands as a cornerstone of automation within the semiconductor manufacturing process, serving as a sophisticated robotic tool for the precise and efficient handling of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
  • SiC Rotary Seal Ring

    SiC Rotary Seal Ring

    Semicorex SiC Rotary Seal Ring is designed to perform under high-pressure and high-temperature conditions. Its stability and durability in such environments make it an invaluable component in sealing applications where traditional materials might fail.
  • TaC Plate

    TaC Plate

    Semicorex TaC Plate is a high-performance, TaC-coated graphite component designed for use in SiC epitaxy growth processes. Choose Semicorex for its expertise in manufacturing reliable, high-quality materials that optimize the performance and longevity of your semiconductor production equipment.*
  • Related Blog
  • Reviews

  • What is the advantage of silicon carbide?

  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept