English
Home > Products > non ferrous furnace

China non ferrous furnace Manufacturers, Suppliers, Factory

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our firm for the long-term to create jointly with consumers for mutual reciprocity and mutual reward for non ferrous furnace,aln crucible,aln ceramic substrate,ain aluminium nitride,aluminum nitride cost, Being a young escalating company, we might not the top, but we're trying our best to generally be your superior partner.
non ferrous furnace, Merchandise have been exported to Asia, Mid-east,European and Germany market. Our company has constantly been able to update the goods performance and safety to meet the markets and strive to be top A on stable quality and sincere service. If you have the honor to do business with our company. we will definitely do our very best to support your business in China.

Related Products

Hot Products

  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Wafer Process Heater

    Wafer Process Heater

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Wafer Process Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Quartz Crucible

    Quartz Crucible

    Semicorex quartz crucible is designed for use in the single-crystal growth of semiconductor materials, ensuring optimal performance and crystal quality. Choose Semicorex for our superior craftsmanship, precision engineering, and commitment to delivering products that meet the highest industry standards.*
  • SiC Wafer Holder

    SiC Wafer Holder

    Semicorex SiC (Silicon Carbide) SiC Wafer Holder, also known as a wafer chuck or wafer carrier, is a specialized tool used in the handling and processing of semiconductor wafers. It is designed to securely hold and protect the delicate silicon carbide wafers during various stages of fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Washing Cassette

    Wafer Washing Cassette

    Semicorex Wafer Washing Cassette, made from high-performance PFA material, is designed to securely hold and clean wafers in semiconductor, photovoltaic, and electronics manufacturing. Choose Semicorex for our commitment to delivering durable, reliable, and customizable products that enhance your production efficiency and product quality.*
  • Related Blog
  • Reviews

  • SiGe in Chip Manufacturing: A Professional News Report

    To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

  • The unit in semiconductor: Angstrom

    As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept