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SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

That's where the game-changing innovation of TaC Coating enters the picture, and why our advanced solutions at Semicorex are engineered to directly address your most persistent production pain points. Graphite is fantastic for its thermal properties, but without a robust shield, it simply cannot withstand the aggressive conditions inside many process chambers.

Wafer cleaning refers to the process of removing particulate contaminants, organic contaminants, metal contaminants, and natural oxide layers from the wafer surface using physical or chemical methods before semiconductor processes such as oxidation, photolithography, epitaxy, diffusion, and wire evaporation. In the semiconductor manufacturing, the yield rate of semiconductor devices largely depends on the cleanliness of the semiconductor wafer surface. Therefore, to achieve the cleanliness required for semiconductor manufacturing, the rigorous wafer cleaning processes are essential.