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Adhering towards the theory of "quality, support, efficiency and growth", we've attained trusts and praises from domestic and international client for MOCVD Star Disc,MOCVD Reactor Susceptors,Veeco MOCVD Susceptor,SiC-Coated MOCVD Reactor Part,MOCVD Ceiling, We are expecting to cooperate with you on the basis of mutual benefits and common development. We will never disappoint you.
MOCVD Star Disc, Based on experienced engineers, all orders for drawing-based or sample-based processing are welcomed. We have won a good reputation for outstanding customer service among our overseas customers. We will continue to try the best to offer you good quality products and the best service. We are looking forward to serving you.

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    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

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  • What is Electrostatic Chuck(ESC)?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

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