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  • LED GaN Epitaxial Wafers on PSS

    • China LED GaN Epitaxial Wafers on PSS Manufacturers, Suppliers, Factory

    Semicorex has been producing LED GaN Epitaxial Wafers on PSS for many years and is one of the professional LED GaN Epitaxial Wafers on PSS manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • N-type Silicon Carbide Powder

      N-type Silicon Carbide Powder

      Semicorex N-type Silicon Carbide powder (SiC) is a high-purity, doped SiC material specifically designed for advanced crystal growth applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Si3N4 Sleeve

      Si3N4 Sleeve

      Si3N4 Sleeve by Semicorex is a versatile and high-performance material that offers a unique combination of low density, superior hardness, excellent wear resistance, and exceptional thermal and chemical stability.**
    • Wafer Holder for ICP Etching Process

      Wafer Holder for ICP Etching Process

      Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
    • SiC Disc Susceptor

      SiC Disc Susceptor

      Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
    • Epi Pre Heat Ring

      Epi Pre Heat Ring

      Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
    • Hard Composite Carbon Fiber Felt

      Hard Composite Carbon Fiber Felt

      Semicorex provides Hard Composite Carbon Fiber Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is a semiconductor?

      Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

    • Difficulty in preparing SiC substrates

      At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

    • TaC Coating

      According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

    • Tantalum carbide coatings in semiconductor industry

      The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

      4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

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